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SI7946DP New Product Vishay Siliconix Dual N-Channel 150-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 rDS(on) (W) 0.150 @ VGS = 10 V 0.168 @ VGS = 6 V ID (A) 3.3 3.1 D D D D D TrenchFETr Power MOSFET New Low Thermal Resistance PowerPAKr Dual MOSFET for Space Savings PWM Optimized for Fast Switching Avalanche Rated Package APPLICATIONS D Primary Side Switch PowerPAK SO-8 D1 D2 6.15 mm S1 1 2 G1 S2 5.15 mm 3 4 G2 D1 8 7 G1 D1 D2 G2 6 5 D2 Bottom View Ordering Information: SI7946DP-T1 S1 N-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Single Avalanche Current Single Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C Conduction)a L = 0.1 mH TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg 10 secs 150 "20 3.3 2.6 10 2.9 9 4 3.5 2.2 Steady State Unit V 2.1 1.7 A 1.2 mJ 1.4 0.9 W _C -55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 72282 S-31361--Rev. A, 30-Jun-03 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJC Typical 26 60 3.2 Maximum 35 85 4.2 Unit _C/W C/W 1 SI7946DP Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 120 V, VGS = 0 V VDS = 120 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 3.3 A VGS = 6 V, ID = 3.1 A VDS = 15 V, ID = 3.3 A IS = 2.9 A, VGS = 0 V 10 0.124 0.137 9 0.87 1.2 0.150 0.168 2 4.0 "100 1 5 V nA mA A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resostamce Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 2.9 A, di/dt = 100 A/ms VDD = 75 V, RL = 75 W ID ^ 1 A, VGEN = 10 V, RG = 6 W f = 1MHz VDS = 75 V, VGS = 10 V, ID = 3.3 A 12.6 2.8 4.5 3.5 11 15 30 20 62 20 25 45 30 100 ns W 20 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 10 VGS = 10 thru 6 V 8 I D - Drain Current (A) 5V I D - Drain Current (A) 8 10 Transfer Characteristics 6 6 4 4 TC = 125_C 2 25_C -55_C 0 2 4V 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) 0 1 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) Document Number: 72282 S-31361--Rev. A, 30-Jun-03 www.vishay.com 2 SI7946DP New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0.20 r DS(on) - On-Resistance ( W ) Vishay Siliconix On-Resistance vs. Drain Current 1000 Capacitance VGS = 6 V 0.12 C - Capacitance (pF) 0.16 800 Ciss VGS = 10 V 600 0.08 400 0.04 200 Coss Crss 0.00 0 2 4 6 8 10 0 0 10 20 30 40 50 60 70 80 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 75 V ID = 3.3 A 8 2.4 On-Resistance vs. Junction Temperature VGS = 10 V ID = 3.3 A 2.0 6 r DS(on) - On-Resistance ( W) (Normalized) 6 9 12 15 1.6 4 1.2 2 0.8 0 0 3 Qg - Total Gate Charge (nC) 0.4 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 10 0.40 0.35 r DS(on) - On-Resistance ( W ) I S - Source Current (A) 0.30 0.25 0.20 0.15 0.10 0.05 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 On-Resistance vs. Gate-to-Source Voltage ID = 3.3 A ID = 1 A TJ = 150_C TJ = 25_C 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 72282 S-31361--Rev. A, 30-Jun-03 www.vishay.com 3 SI7946DP Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.8 50 Single Pulse Power 0.4 V GS(th) Variance (V) 40 ID = 250 mA Power (W) 30 0.0 -0.4 20 -0.8 10 -1.2 -50 -25 0 25 50 75 100 125 150 0 0.01 0.1 1 Time (sec) 10 100 1000 TJ - Temperature (_C) 100 Safe Operating Area, Junction-To-Ambient rDS(on) Limited IDM Limited 10 I D - Drain Current (A) P(t) = 0.0001 P(t) = 0.001 1 ID(on) Limited TA = 25_C Single Pulse P(t) = 0.01 P(t) = 0.1 P(t) = 1 P(t) = 10 dc BVDSS Limited 1 10 100 0.1 0.01 0.1 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 Square Wave Pulse Duration (sec) Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 60_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 www.vishay.com 4 Document Number: 72282 S-31361--Rev. A, 30-Jun-03 SI7946DP New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse Vishay Siliconix Normalized Effective Transient Thermal Impedance 0.01 10 - 4 10 - 3 10 - 2 Square Wave Pulse Duration (sec) 10 - 1 1 Document Number: 72282 S-31361--Rev. A, 30-Jun-03 www.vishay.com 5 |
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